Mademoiselle GANDY Amy : A TEM study of the formation and interaction of radiation induced defects in Si during thermal annealing.

Le vendredi 19 décembre 2008 à l’IMR (Institut of Materials Research) de l’Université de SALFORD (UK).
Mademoiselle GANDY Amy
Laboratoire de Physique des Matériaux (LPM).
A TEM study of the formation and interaction of radiation induced defects in Si during thermal annealing.

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